

 |
SAPPHIRE
| Specification Item |
¡¡ |
Value |
Tolerance |
Remark(s): |
 |
Standard Orientation |
C-Plane |
¡À0.3¡ã |
(0001) |
| Special Orientation |
C+0.2¡ãto A |
¡À0.1¡ã |
on request |
| Primary Flat Orientation |
A-Plane |
¡À0.3¡ã |
(11-20) |
| Primary Flat Length |
16.0mm |
¡À1.0mm |
¡¡ |
| Secondary Flat |
¡¡ |
¡¡ |
on request |
| Diameter |
¡¡ |
50.80mm |
¡À0.15mm |
¡¡ |
| Thickness(center point) |
330-430¦Ìm |
¡À25¦Ìm |
¡¡ |
| Total Thickness Variation(TTV) |
¡Ü 15¦Ìm |
¡¡ |
¡¡ |
| Local Thickness Variation(LTV) |
¡Ü 5¦Ìm,95£¥ |
¡¡ |
5mm x 5mm |
| Bow |
¡¡ |
¡Ü20¦Ìm |
¡¡ |
¡¡ |
| Front Surface Roughness(Ra) |
¡Ü 5A |
¡¡ |
MIL standard |
| Backside Surface Roughness(Ra) |
¡Ü1.0¦Ìm |
¡¡ |
ground |
| Chips |
¡¡ |
3x©‚0.2mm |
¡¡ |
max. |
| Wafer Edge Bevel |
¡¡ |
©‚©„150¦Ìm at 45¡ã |
¡¡ |
¡¡ |
| Cleanliness |
¡¡ |
no stains and finger prints,ready for epi |
¡¡ |
¡¡ |
| Packaging |
¡¡ |
cassettes of 25pcs or individually |
¡¡ |
¡¡ |
Li2B4O7
| Basic SAW Properties(45¡ãrotated X-cut) |
|
| Propagation Direction: |
Z-axis |
| EI.-Mech.Coupling Coefficient(K2): |
0.0 |
| Surface Wave Velocity: |
3401m/s |
| Group Delay Time Temp.Coefficient: |
0ppm/¡æ |
| Specification Item |
¡¡ |
Value |
Tolerance |
 |
Orientation |
45¡ãrotated X-cut |
¡À0.25¡ã |
| Orientation Flat |
perpendicular to Z-axis |
¡À0.25¡ã |
| Orientation Flat Length |
22.0mm |
¡À0.20mm |
| Secondary Flat Position |
none/on request |
¡¡ |
| Secondary Flat Length |
none/on request |
¡¡ |
| Diameter |
¡¡ |
76.20mm |
¡À0.30mm |
| Thickness(center point) |
350¦Ìm¡«500¦Ìm |
¡À30¦Ìm |
| Total Thickness Variation(TTV) |
¡Ü 10¦Ìm |
¡¡ |
| Local Thickness Variation(lTV)within 5mm x 5mm |
¡Ü 1.5¦Ìm |
95£¥(PLTV) |
| Bow |
¡¡ |
.-25¦Ìm¡Übow¡Ü+25¦Ìm |
¡¡ |
| Warp |
¡¡ |
¡Ü 50¦Ìm |
¡¡ |
| Front Surface Roughness(Ra) |
¡Ü 7A |
(mirror polished) |
| Backside Surface Roughness(Ra) |
0.2¦Ìm¡«0.5¦Ìm |
(GC# 1200 lapped |
Other specifications are available on request.
3"LiTaO3 (LT)Wafers
| Commmodity |
Czochraiski("CZ")Grown Lithium Tantalate(Single Crystal,Single Domain,Congruent Composition¡¡¡¡¡¡ |
| Orientation |
42¡ãrot.Y-cut¡À0.25¡ã |
38.8¡ãrot.Y-cut¡À0.25¡ã |
36¡ãrot.Y-cut¡À0.25¡ã |
X-cut¡À0.25¡ã |
| Diameter |
76.2mm¡À0.3mm |
76.2mm¡À0.3mm |
76.2mm¡À0.3mm |
76.2mm¡À0.3mm |
| Orientation Flat |
22mm¡À2mm |
22mm¡À2mm |
22mm¡À2mm |
22mm¡À2mm |
| ¡¡ |
perpendicular toX¡À0.25¡ã |
perpendicular toX¡À0.25¡ã |
perpendicular toX¡À0.25¡ã |
parallel to Y-112.2¡À0.25¡ã |
| Second Flat |
10mm¡À3mm |
10mm¡À3mm |
10mm¡À3mm |
10mm¡À3mm |
| ¡¡ |
CW 90¡ã¡À0.5¡ãfrom OF |
CW 105¡ã¡À0.5¡ãfrom OF |
CW 120¡ã¡À0.5¡ãfrom OF |
CW 150¡ã¡À0.5¡ãfrom OF |
| Thickness |
350¦Ìm¡À30¦Ìm |
350¦Ìm¡À30¦Ìm |
350¦Ìm¡À30¦Ìm |
350¦Ìm¡À30¦Ìm |
| ¡¡ |
500¦Ìm¡À30¦Ìm |
500¦Ìm¡À30¦Ìm |
500¦Ìm¡À30¦Ìm |
500¦Ìm¡À30¦Ìm |
| Propagating Surface |
"+"-side,Ra¡Ü7A |
"+"-side,Ra¡Ü7A |
"+"-side,Ra¡Ü7A |
"+"-side,Ra¡Ü7A |
| Wafer Backside |
GC#1000 lapped & etched |
GC#1000 lapped & etched |
GC#1000 lapped & etched |
GC#1000 lapped & etched |
| ¡¡ |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
| TTV |
¡Ü 10¦Ìm |
| LTV |
¡Ü 1.5¦Ìm within an area of 5mm ¡Á 5mm |
| PLTV |
¡Ý 95%(3mm from edge excluded |
| Bow |
.-25 ¡Ü bow ¡Ü +25¦Ìm |
| Warp |
¡Ü50¦Ìm |
| Curie Temperature |
605¡æ ¡À 2¡æ |
4"LiTaO3 (LT)Wafers
| Commmodity |
Czochraiski("CZ")Grown Lithium Tantalate(Single Crystal,Single Domain,Congruent Composition¡¡¡¡¡¡ |
| Orientation |
42¡ãrot.Y-cut¡À0.25¡ã |
38.8¡ãrot.Y-cut¡À0.25¡ã |
36¡ãrot.Y-cut¡À0.25¡ã |
X-cut¡À0.25¡ã |
| Diameter |
100.0mm¡À0.5mm |
100.0mm¡À0.5mm |
100.0mm¡À0.5mm |
100.0mm¡À0.5mm |
| Orientation Flat |
32mm¡À2mm |
32mm¡À2mm |
32mm¡À2mm |
32mm¡À2mm |
| ¡¡ |
perpendicular toX¡À0.25¡ã |
perpendicular toX¡À0.25¡ã |
perpendicular toX¡À0.25¡ã |
parallel to Y-112.2¡À0.25¡ã |
| Second Flat |
13mm¡À3mm |
13mm¡À3mm |
13mm¡À3mm |
13mm¡À3mm |
| ¡¡ |
CW 90¡ã¡À0.5¡ãfrom OF |
CW 105¡ã¡À0.5¡ãfrom OF |
CW 120¡ã¡À0.5¡ãfrom OF |
CW 150¡ã¡À0.5¡ãfrom OF |
| Thickness |
350¦Ìm¡À30¦Ìm |
350¦Ìm¡À30¦Ìm |
350¦Ìm¡À30¦Ìm |
350¦Ìm¡À30¦Ìm |
| ¡¡ |
500¦Ìm¡À30¦Ìm |
500¦Ìm¡À30¦Ìm |
500¦Ìm¡À30¦Ìm |
500¦Ìm¡À30¦Ìm |
| Propagating Surface |
"+"-side,Ra¡Ü7A |
"+"-side,Ra¡Ü7A |
"+"-side,Ra¡Ü7A |
"+"-side,Ra¡Ü7A |
| Wafer Backside |
GC#1000 lapped & etched |
GC#1000 lapped & etched |
GC#1000 lapped & etched |
GC#1000 lapped & etched |
| ¡¡ |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
| TTV |
¡Ü 12¦Ìm |
| LTV |
¡Ü 1.5¦Ìm within an area of 5mm ¡Á 5mm |
| PLTV |
¡Ý 95%(3mm from edge excluded |
| Bow |
.-30 ¡Ü bow ¡Ü +30¦Ìm |
| Warp |
¡Ü60¦Ìm |
| Curie Temperature |
605¡æ ¡À 2¡æ |
3"LiNbO3 (LN)Wafers
| Commmodity |
Czochraiski("CZ")Grown Lithium Niobate(Single,Congruent) |
¡¡ |
¡¡ |
| Orientation |
64¡ãrotated.Y-cut¡À0.25¡ã |
127.86¡ãrot.Y-cut¡À0.25¡ã |
X-cut¡À0.25¡ã |
| Diameter |
76.2mm¡À0.3mm |
76.2mm¡À0.3mm |
76.2mm¡À0.3mm |
| Orientation Flat |
22mm¡À2mm |
22mm¡À2mm |
22mm¡À2mm |
| ¡¡ |
perpendicular toX¡À0.25¡ã |
perpendicular toX¡À0.25¡ã |
¡¡ |
| Thickness |
350¦Ìm¡À30¦Ìm |
350¦Ìm¡À30¦Ìm |
350¦Ìm¡À30¦Ìm |
| ¡¡ |
500¦Ìm¡À30¦Ìm |
500¦Ìm¡À30¦Ìm |
500¦Ìm¡À30¦Ìm |
| Propagating Surface |
"+"-side,Ra¡Ü7A |
"+"-side,Ra¡Ü7A |
"+"-side,Ra¡Ü7A |
| Wafer Backside |
GC#1000 lapped & etched |
GC#1000 lapped & etched |
GC#1000 lapped & etched |
| ¡¡ |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
| TTV |
¡Ü 10¦Ìm |
| LTV |
¡Ü 1.5¦Ìm within an area of 5mm ¡Á 5mm |
| PLTV |
¡Ý 95%(3mm from edge excluded |
| Bow |
.-25 ¡Ü bow ¡Ü +25¦Ìm |
| Warp |
¡Ü50¦Ìm |
| Curie Temperature |
1142¡æ ¡À 2¡æ |
4"LiNbO3 (LN)Wafers
| Commmodity |
Czochraiski("CZ")Grown Lithium Niobate(Single,Congruent) |
¡¡ |
¡¡ |
| Orientation |
64¡ãrotated.Y-cut¡À0.25¡ã |
127.86¡ãrot.Y-cut¡À0.25¡ã |
X-cut¡À0.25¡ã |
| Diameter |
100.0mm¡À0.5mm |
100.0mm¡À0.5mm |
100.0mm¡À0.5mm |
| Orientation Flat |
32mm¡À2mm |
32mm¡À2mm |
32mm¡À2mm |
| ¡¡ |
perpendicular toX¡À0.25¡ã |
perpendicular toX¡À0.25¡ã |
perpendicular to Z¡À0.25¡ã |
| Thickness |
350¦Ìm¡À30¦Ìm |
350¦Ìm¡À30¦Ìm |
350¦Ìm¡À30¦Ìm |
| ¡¡ |
500¦Ìm¡À30¦Ìm |
500¦Ìm¡À30¦Ìm |
500¦Ìm¡À30¦Ìm |
| Propagating Surface |
"+"-side,Ra¡Ü7A |
"+"-side,Ra¡Ü7A |
"+"-side,Ra¡Ü7A |
| Wafer Backside |
GC#1000 lapped & etched |
GC#1000 lapped & etched |
GC#1000 lapped & etched |
| ¡¡ |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
0.2¦Ìm¡ÜRa¡Ü0.5¦Ìm |
| TTV |
¡Ü 12¦Ìm |
| LTV |
¡Ü 1.5¦Ìm within an area of 5mm ¡Á 5mm |
| PLTV |
¡Ý 95%(3mm from edge excluded |
| Bow |
.-30 ¡Ü bow ¡Ü +30¦Ìm |
| Warp |
¡Ü60¦Ìm |
| Curie Temperature |
1142¡æ ¡À 2¡æ |
|